BD676 Bipolar Transistor

Characteristics of BD676 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD676

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BD676 equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the BD676 is the BD675.

Replacement and Equivalent for BD676 transistor

You can replace the BD676 with the 2N6035, 2N6035G, 2N6036, 2N6036G, BD676A, BD676AG, BD676G, BD678, BD678A, BD678AG, BD678G, BD680, BD680A, BD680AG, BD680G, BD776, BD778, BD780, KSE700, KSE701, KSE702, KSE703, MJE700, MJE700G, MJE701, MJE701G, MJE702, MJE702G, MJE703 or MJE703G.

Lead-free Version

The BD676G transistor is the lead-free version of the BD676.
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