2SC2912-R Bipolar Transistor

Characteristics of 2SC2912-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 200 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.14 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SC2912-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC2912-R transistor can have a current gain of 100 to 200. The gain of the 2SC2912 will be in the range from 100 to 400, for the 2SC2912-S it will be in the range from 140 to 280, for the 2SC2912-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC2912-R might only be marked "C2912-R".

Complementary PNP transistor

The complementary PNP transistor to the 2SC2912-R is the 2SA1210-R.

Replacement and Equivalent for 2SC2912-R transistor

You can replace the 2SC2912-R with the 2N5655, 2N5655G, 2N5656, 2N5656G, 2N5657, 2N5657G, 2SC2688, 2SC2688-L, 2SC2899, 2SC3601, 2SC3601-E, 2SC3956, 2SC3956-E, 2SC4212, BD127, BD128, BD129, BD157, BD158, BD159, BD410, BUX86, KSC2688, KSC2688-Y, KSE340, MJE340, MJE340G, MJE3439, MJE3439G, MJE344, MJE3440 or MJE344G.
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