BD159 Bipolar Transistor

Characteristics of BD159 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 350 V
  • Collector-Base Voltage, max: 375 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 30 to 240
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD159

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for BD159 transistor

You can replace the BD159 with the 2N5657, 2N5657G, 2SC2899 or BD129.
If you find an error please send an email to mail@el-component.com