2SC2912-T Bipolar Transistor

Characteristics of 2SC2912-T Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 200 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.14 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SC2912-T

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC2912-T transistor can have a current gain of 200 to 400. The gain of the 2SC2912 will be in the range from 100 to 400, for the 2SC2912-R it will be in the range from 100 to 200, for the 2SC2912-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC2912-T might only be marked "C2912-T".

Complementary PNP transistor

The complementary PNP transistor to the 2SC2912-T is the 2SA1210-T.

Replacement and Equivalent for 2SC2912-T transistor

You can replace the 2SC2912-T with the 2SC2899, BD127, BD128, BD129 or BUX86.
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