2N5657 Bipolar Transistor

Characteristics of 2N5657 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 350 V
  • Collector-Base Voltage, max: 375 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 30 to 250
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of 2N5657

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N5657 transistor

You can replace the 2N5657 with the 2N5657G, 2SC2899 or BD129.
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