BD158 Bipolar Transistor

Characteristics of BD158 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 300 V
  • Collector-Base Voltage, max: 325 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 30 to 240
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD158

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for BD158 transistor

You can replace the BD158 with the 2N5656, 2N5656G, 2N5657, 2N5657G, 2SC2899, BD128, BD129, BD159, BD410, KSE340, MJE340 or MJE340G.
If you find an error please send an email to mail@el-component.com