2N5655G Bipolar Transistor

Characteristics of 2N5655G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 275 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 30 to 250
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of 2N5655G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N5655G transistor

You can replace the 2N5655G with the 2N5655, 2N5656, 2N5656G, 2N5657, 2N5657G, 2SC2899, BD127, BD128 or BD129.
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