BD157 Bipolar Transistor

Characteristics of BD157 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 250 V
  • Collector-Base Voltage, max: 275 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 30 to 240
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD157

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for BD157 transistor

You can replace the BD157 with the 2N5655, 2N5655G, 2N5656, 2N5656G, 2N5657, 2N5657G, 2SC2899, BD127, BD128, BD129, BD158, BD159, BD410, KSE340, MJE340 or MJE340G.
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