2N5657G Bipolar Transistor

Characteristics of 2N5657G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 350 V
  • Collector-Base Voltage, max: 375 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 30 to 250
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of 2N5657G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N5657G transistor

You can replace the 2N5657G with the 2N5657, 2SC2899 or BD129.
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