2N5657G Bipolar Transistor
Characteristics of 2N5657G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 350 V
- Collector-Base Voltage, max: 375 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 30 to 250
- Transition Frequency, min: 10 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
Pinout of 2N5657G
Replacement and Equivalent for 2N5657G transistor
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