BD410 Bipolar Transistor

Characteristics of BD410 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 325 V
  • Collector-Base Voltage, max: 500 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 30 to 240
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-126

Pinout of BD410

Here is an image showing the pin diagram of this transistor.
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