2SA1210-R Bipolar Transistor

Characteristics of 2SA1210-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.14 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SA1210-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1210-R transistor can have a current gain of 100 to 200. The gain of the 2SA1210 will be in the range from 100 to 400, for the 2SA1210-S it will be in the range from 140 to 280, for the 2SA1210-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1210-R might only be marked "A1210-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1210-R is the 2SC2912-R.

Replacement and Equivalent for 2SA1210-R transistor

You can replace the 2SA1210-R with the 2SA1156, 2SA1156K, 2SA1407, 2SA1407-E, 2SA1541, 2SA1541-E, KSA1156, KSA1156Y, KSE350, KTA1703, KTA1703-Y, MJE350 or MJE350G.
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