2SB965-Q Bipolar Transistor

Characteristics of 2SB965-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 75 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB965-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB965-Q transistor can have a current gain of 100 to 200. The gain of the 2SB965 will be in the range from 60 to 320, for the 2SB965-P it will be in the range from 160 to 320, for the 2SB965-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB965-Q might only be marked "B965-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB965-Q is the 2SD1288-Q.

Replacement and Equivalent for 2SB965-Q transistor

You can replace the 2SB965-Q with the 2SA1093, 2SA1106, 2SA1146, 2SA1633, 2SA1633-E, 2SA1788, 2SA1788-E, 2SB1162, 2SB1162-P, 2SB1163, 2SB1163-P, 2SB1361, 2SB1361-P, 2SB1362, 2SB1362-P, 2SB695, 2SB816, 2SB816-E, 2SB817, 2SB817-E, 2SB817C, 2SB966, 2SB966-Q, KTB817, KTB817-Y, KTB817B, KTB817B-Y, MJW1302A or MJW1302AG.
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