2SB966-Q Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -120 V
• Collector-Base Voltage, max: -120 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -8 A
• Collector Dissipation: 80 W
• DC Current Gain (h_fe): 100 to 200
• Transition Frequency, min: 65 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-3P

Here is an image showing the pin diagram of this transistor.The 2SB966-Q transistor can have a current gain of 100 to 200. The gain of the 2SB966 will be in the range from 60 to 320, for the 2SB966-P it will be in the range from 160 to 320, for the 2SB966-R it will be in the range from 60 to 120.Sometimes the "2S" prefix is not marked on the package - the 2SB966-Q might only be marked "B966-Q".The complementary NPN transistor to the 2SB966-Q is the 2SD1289-Q.You can replace the 2SB966-Q with the 2SA1093, 2SA1106, 2SA1146, 2SA1633, 2SA1633-E, 2SA1788, 2SA1788-E, 2SB1162, 2SB1162-P, 2SB1163, 2SB1163-P, 2SB1361, 2SB1361-P, 2SB1362, 2SB1362-P, 2SB816, 2SB816-E, 2SB817, 2SB817-E, 2SB817C, KTB817, KTB817-Y, KTB817B, KTB817B-Y, MJW1302A or MJW1302AG.