2SB817C Bipolar Transistor

Characteristics of 2SB817C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 120 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB817C

Here is an image showing the pin diagram of this transistor.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB817C might only be marked "B817C".

Complementary NPN transistor

The complementary NPN transistor to the 2SB817C is the 2SD1047C.

Replacement and Equivalent for 2SB817C transistor

You can replace the 2SB817C with the 2SB1162, 2SB1162-P, 2SB1163, 2SB1163-P, 2SB817, 2SB817-E, KTB817, KTB817-Y, KTB817B, KTB817B-Y, MJW1302A or MJW1302AG.
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