2SB817C Bipolar Transistor
Characteristics of 2SB817C Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -140 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -12 A
- Collector Dissipation: 120 W
- DC Current Gain (hfe): 100 to 200
- Transition Frequency, min: 10 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
Pinout of 2SB817C
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB817C transistor
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