2SB965-P Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -120 V
• Collector-Base Voltage, max: -120 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -7 A
• Collector Dissipation: 70 W
• DC Current Gain (h_fe): 160 to 320
• Transition Frequency, min: 75 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-3P

Here is an image showing the pin diagram of this transistor.The 2SB965-P transistor can have a current gain of 160 to 320. The gain of the 2SB965 will be in the range from 60 to 320, for the 2SB965-Q it will be in the range from 100 to 200, for the 2SB965-R it will be in the range from 60 to 120.Sometimes the "2S" prefix is not marked on the package - the 2SB965-P might only be marked "B965-P".The complementary NPN transistor to the 2SB965-P is the 2SD1288-P.You can replace the 2SB965-P with the 2SA1106, 2SA1633, 2SA1633-F, 2SA1788, 2SA1788-F, 2SB966 or 2SB966-P.