KTB817-Y Bipolar Transistor

Characteristics of KTB817-Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P
  • Electrically Similar to the Popular 2SB817-E transistor

Pinout of KTB817-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB817-Y transistor can have a current gain of 100 to 200. The gain of the KTB817 will be in the range from 60 to 200, for the KTB817-O it will be in the range from 60 to 120.

Replacement and Equivalent for KTB817-Y transistor

You can replace the KTB817-Y with the 2SB1162, 2SB1162-P, 2SB1163, 2SB1163-P, 2SB817, 2SB817-E, 2SB817C, KTB817B, KTB817B-Y, MJW1302A or MJW1302AG.
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