2SB965 Bipolar Transistor

Characteristics of 2SB965 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 60 to 320
  • Transition Frequency, min: 75 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB965

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB965 transistor can have a current gain of 60 to 320. The gain of the 2SB965-P will be in the range from 160 to 320, for the 2SB965-Q it will be in the range from 100 to 200, for the 2SB965-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB965 might only be marked "B965".

Complementary NPN transistor

The complementary NPN transistor to the 2SB965 is the 2SD1288.

Replacement and Equivalent for 2SB965 transistor

You can replace the 2SB965 with the 2SA1106, 2SA1633, 2SA1788 or 2SB966.
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