2SB816 Bipolar Transistor

Characteristics of 2SB816 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -40 to +150 °C
  • Package: TO-3P

Pinout of 2SB816

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB816 transistor can have a current gain of 60 to 200. The gain of the 2SB816-D will be in the range from 60 to 120, for the 2SB816-E it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB816 might only be marked "B816".

Complementary NPN transistor

The complementary NPN transistor to the 2SB816 is the 2SD1046.

Replacement and Equivalent for 2SB816 transistor

You can replace the 2SB816 with the 2SA1093, 2SA1106, 2SA1146, 2SA1633, 2SA1788, 2SB1162, 2SB1163, 2SB1361, 2SB1362, 2SB817, 2SB966, KTB817, KTB817B, MJW1302A or MJW1302AG.
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