2SB817-E Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -140 V
• Collector-Base Voltage, max: -160 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -12 A
• Collector Dissipation: 100 W
• DC Current Gain (h_fe): 100 to 200
• Transition Frequency, min: 15 MHz
• Operating and Storage Junction Temperature Range: -40 to +150 °C
• Package: TO-3P

Here is an image showing the pin diagram of this transistor.The 2SB817-E transistor can have a current gain of 100 to 200. The gain of the 2SB817 will be in the range from 60 to 200, for the 2SB817-D it will be in the range from 60 to 120.Sometimes the "2S" prefix is not marked on the package - the 2SB817-E might only be marked "B817-E".The complementary NPN transistor to the 2SB817-E is the 2SD1047-E.You can replace the 2SB817-E with the 2SB1162, 2SB1162-P, 2SB1163, 2SB1163-P, 2SB817C, KTB817, KTB817-Y, KTB817B, KTB817B-Y, MJW1302A or MJW1302AG.