2SA1633-E Bipolar Transistor

Characteristics of 2SA1633-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-247

Pinout of 2SA1633-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1633-E transistor can have a current gain of 100 to 200. The gain of the 2SA1633 will be in the range from 60 to 320, for the 2SA1633-D it will be in the range from 60 to 120, for the 2SA1633-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1633-E might only be marked "A1633-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1633-E is the 2SC4278-E.

Replacement and Equivalent for 2SA1633-E transistor

You can replace the 2SA1633-E with the 2SB1162, 2SB1162-P, 2SB1163, 2SB1163-P, MJW1302A or MJW1302AG.
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