2SB1163 Bipolar Transistor

Characteristics of 2SB1163 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1163

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1163 transistor can have a current gain of 60 to 200. The gain of the 2SB1163-P will be in the range from 100 to 200, for the 2SB1163-Q it will be in the range from 60 to 120, for the 2SB1163-S it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1163 might only be marked "B1163".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1163 is the 2SD1718.

Replacement and Equivalent for 2SB1163 transistor

You can replace the 2SB1163 with the MJW1302A or MJW1302AG.
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