2SD1763A-E Bipolar Transistor

Characteristics of 2SD1763A-E Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SD1763A-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1763A-E transistor can have a current gain of 60 to 120. The gain of the 2SD1763A will be in the range from 60 to 200, for the 2SD1763A-F it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1763A-E might only be marked "D1763A-E".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1763A-E is the 2SB1186A-D.

Replacement and Equivalent for 2SD1763A-E transistor

You can replace the 2SD1763A-E with the 2SC2336, 2SC2336-R, 2SC2336A, 2SC2336A-R, 2SC2336B, 2SC2336B-R, 2SC2344, 2SC2344D, 2SC4382, 2SC4883A, 2SC5248, 2SC5248-D, 2SD1264A, 2SD1264A-Q, 2SD610, 2SD610-R, 2SD772A, 2SD772B, 2SD792A, 2SD792B, FJP5200, FJPF5200, MJE15032, MJE15032G, TIP41F or TIP42F.
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