2SA1006A-P Bipolar Transistor

Characteristics of 2SA1006A-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1006A-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1006A-P transistor can have a current gain of 160 to 320. The gain of the 2SA1006A will be in the range from 60 to 320, for the 2SA1006A-Q it will be in the range from 100 to 200, for the 2SA1006A-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1006A-P might only be marked "A1006A-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1006A-P is the 2SC2336A-P.

Replacement and Equivalent for 2SA1006A-P transistor

You can replace the 2SA1006A-P with the 2SA1006B, 2SA1006B-P, 2SA1668, MJE15033, MJE15033G, MJE15035, MJE15035G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
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