2SA1006B-P Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -250 V
• Collector-Base Voltage, max: -250 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -1.5 A
• Collector Dissipation: 25 W
• DC Current Gain (h_fe): 160 to 320
• Transition Frequency, min: 80 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-220

Here is an image showing the pin diagram of this transistor.The 2SA1006B-P transistor can have a current gain of 160 to 320. The gain of the 2SA1006B will be in the range from 60 to 320, for the 2SA1006B-Q it will be in the range from 100 to 200, for the 2SA1006B-R it will be in the range from 60 to 120.Sometimes the "2S" prefix is not marked on the package - the 2SA1006B-P might only be marked "A1006B-P".The complementary NPN transistor to the 2SA1006B-P is the 2SC2336B-P.You can replace the 2SA1006B-P with the MJE15033, MJE15033G, MJE15035, MJE15035G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.