KSD569-R Bipolar Transistor

Characteristics of KSD569-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 80
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular 2SD569-M transistor

Pinout of KSD569-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSD569-R transistor can have a current gain of 40 to 80. The gain of the KSD569 will be in the range from 40 to 200, for the KSD569-O it will be in the range from 60 to 120, for the KSD569-Y it will be in the range from 100 to 200.

Complementary PNP transistor

The complementary PNP transistor to the KSD569-R is the KSB708-R.

Replacement and Equivalent for KSD569-R transistor

You can replace the KSD569-R with the 2N6100, 2N6101, 2N6131, 2N6488, 2N6488G, 2SC2334, 2SC2334M, 2SD569, 2SD569-M, BD537, BD537K, BD709, BD711, BD743B, BD743C, BD799, BD801, BD809, BD909, BD911, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDT93, BDT93F, BDT95, BDT95F, BDX77, KSC2334, KSC2334R, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, MJF3055 or MJF3055G.
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