BD376-10 Bipolar Transistor

Characteristics of BD376-10 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 63 to 160
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of BD376-10

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD376-10 transistor can have a current gain of 63 to 160. The gain of the BD376 will be in the range from 40 to 375, for the BD376-16 it will be in the range from 100 to 250, for the BD376-25 it will be in the range from 150 to 375, for the BD376-6 it will be in the range from 40 to 100.

Complementary NPN transistor

The complementary NPN transistor to the BD376-10 is the BD375-10.

Replacement and Equivalent for BD376-10 transistor

You can replace the BD376-10 with the 2SA1214, 2SB744, 2SB744A, BD132, BD176, BD176-10, BD178, BD178-10, BD180, BD180-10, BD180G, BD188, BD190, BD234, BD234G, BD236, BD236G, BD238, BD238G, BD378, BD378-10, BD380, BD380-10, BD786, BD788, BD788G, BD790, KSB744, KSB744A, KSE171, KSE172, MJE171, MJE171G, MJE172, MJE172G, MJE233, MJE235, MJE250, MJE251 or MJE252.
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