BD176-10 Bipolar Transistor

Characteristics of BD176-10 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 63 to 160
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of BD176-10

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD176-10 transistor can have a current gain of 63 to 160. The gain of the BD176 will be in the range from 40 to 250, for the BD176-16 it will be in the range from 100 to 250, for the BD176-6 it will be in the range from 40 to 60.

Complementary NPN transistor

The complementary NPN transistor to the BD176-10 is the BD175-10.

Replacement and Equivalent for BD176-10 transistor

You can replace the BD176-10 with the 2SB744, 2SB744A, BD132, BD178, BD178-10, BD180, BD180-10, BD180G, BD188, BD190, BD786, BD788, BD788G, BD790, KSB744, KSB744A, KSE171, KSE172, MJE171, MJE171G, MJE172, MJE172G, MJE233, MJE235, MJE250, MJE251 or MJE252.
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