BC859B Bipolar Transistor

Characteristics of BC859B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BC859B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC859B transistor can have a current gain of 200 to 450. The gain of the BC859 will be in the range from 110 to 800, for the BC859A it will be in the range from 110 to 220, for the BC859C it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC859B is the BC849B.

Replacement and Equivalent for BC859B transistor

You can replace the BC859B with the 2SA1037, 2SA1366, 2SA1518, 2SA1519, 2SA1520, 2SA1521, 2SA812, 2SB709A, 2SB709A-Q, 2SB709A-R, 2SB709A-S, 2STR2160, 2STR2230, BC807, BC857, BC857B, BC858, BC858B, BC860, BC860B, BCW67, BCW68, BCW72, BCW72LT1, BCW72LT1G, BCX17, FMMT549A, FMMTA55, KSA812, KST55, MMBT200, MMBT4354, MMBTA55 or SMBTA55.
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