BC858B Bipolar Transistor

Characteristics of BC858B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BC858B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC858B transistor can have a current gain of 200 to 450. The gain of the BC858 will be in the range from 110 to 800, for the BC858A it will be in the range from 110 to 220, for the BC858C it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC858B is the BC848B.

Replacement and Equivalent for BC858B transistor

You can replace the BC858B with the 2SA1037, 2SA1366, 2SA1518, 2SA1519, 2SA1520, 2SA1521, 2SA812, 2SB709A, 2SB709A-Q, 2SB709A-R, 2SB709A-S, 2STR2160, 2STR2230, BC807, BC857, BC857B, BC859, BC859B, BC860, BC860B, BCW67, BCW68, BCW72, BCW72LT1, BCW72LT1G, BCX17, FMMT549A, FMMTA55, KSA812, KST55, MMBT200, MMBT4354, MMBTA55 or SMBTA55.
If you find an error please send an email to mail@el-component.com