BC859C Bipolar Transistor

Characteristics of BC859C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BC859C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC859C transistor can have a current gain of 420 to 800. The gain of the BC859 will be in the range from 110 to 800, for the BC859A it will be in the range from 110 to 220, for the BC859B it will be in the range from 200 to 450.

Complementary NPN transistor

The complementary NPN transistor to the BC859C is the BC849C.

Replacement and Equivalent for BC859C transistor

You can replace the BC859C with the 2SA1518, 2SA1519, 2SA1520, 2SA1521, BC857, BC857C, BC858, BC858C, BC860, BC860C, FMMT591A, FMMTA55, KST55, MMBTA55 or SMBTA55.
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