BC857B Bipolar Transistor

Characteristics of BC857B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BC857B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC857B transistor can have a current gain of 200 to 450. The gain of the BC857 will be in the range from 110 to 800, for the BC857A it will be in the range from 110 to 220, for the BC857C it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC857B is the BC847B.

Replacement and Equivalent for BC857B transistor

You can replace the BC857B with the 2SA1037, 2SA1366, 2SA1518, 2SA1519, 2SA1520, 2SA1521, 2SA812, 2SB709A, 2SB709A-Q, 2SB709A-R, 2SB709A-S, 2STR2160, BC807, BC856, BC856B, BC860, BC860B, BCW68, BCW72, BCW72LT1, BCW72LT1G, BCX17, FMMTA55, FMMTA56, KSA812, KST55, KST56, MMBT200, MMBT4354, MMBTA55, MMBTA56, PMBTA56, SMBTA55 or SMBTA56.
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