KSA812 Bipolar Transistor
Characteristics of KSA812 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.1 A
- Collector Dissipation: 0.15 W
- DC Current Gain (hfe): 90 to 600
- Transition Frequency, min: 180 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
- Electrically Similar to the Popular 2SA812 transistor
Pinout of KSA812
Classification of hFE
Complementary NPN transistor
Replacement and Equivalent for KSA812 transistor
If you find an error please send an email to mail@el-component.com