BCW67 Bipolar Transistor

Characteristics of BCW67 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -32 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 100 to 630
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW67

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW67 transistor can have a current gain of 100 to 630. The gain of the BCW67A will be in the range from 100 to 250, for the BCW67B it will be in the range from 160 to 400, for the BCW67C it will be in the range from 250 to 630.

Complementary NPN transistor

The complementary NPN transistor to the BCW67 is the BCW65.

Replacement and Equivalent for BCW67 transistor

You can replace the BCW67 with the BCW68.
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