BCW68 Bipolar Transistor

Characteristics of BCW68 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 100 to 630
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW68

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW68 transistor can have a current gain of 100 to 630. The gain of the BCW68F will be in the range from 100 to 250, for the BCW68G it will be in the range from 160 to 400, for the BCW68H it will be in the range from 250 to 630.

Complementary NPN transistor

The complementary NPN transistor to the BCW68 is the BCW66.
If you find an error please send an email to mail@el-component.com