BCW72LT1G Bipolar Transistor
Characteristics of BCW72LT1G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -45 V
- Collector-Base Voltage, max: -50 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.1 A
- Collector Dissipation: 0.3 W
- DC Current Gain (hfe): 200 to 450
- Transition Frequency, min: 100 MHz
- Noise Figure, max: 10 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
- The BCW72LT1G is the lead-free version of the BCW72LT1 transistor
Pinout of BCW72LT1G
Complementary NPN transistor
Replacement and Equivalent for BCW72LT1G transistor
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