2SB709A Bipolar Transistor

Characteristics of 2SB709A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 160 to 460
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SB709A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB709A transistor can have a current gain of 160 to 460. The gain of the 2SB709A-Q will be in the range from 160 to 460, for the 2SB709A-R it will be in the range from 160 to 460, for the 2SB709A-S it will be in the range from 160 to 460.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB709A might only be marked "B709A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB709A is the 2SD601A.

Replacement and Equivalent for 2SB709A transistor

You can replace the 2SB709A with the 2SA1037, 2SA1366, 2SA1518, 2SA1519, 2SA1520, 2SA1521, 2SA812, BC807, BC856, BC857, BC860, BCW68, BCX17, FMMTA55, FMMTA56, KSA812, KST55, KST56, MMBT4354, MMBTA55, MMBTA56, PMBTA56, SMBTA55 or SMBTA56.
If you find an error please send an email to mail@el-component.com