2SD1289-Q Bipolar Transistor

Characteristics of 2SD1289-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD1289-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1289-Q transistor can have a current gain of 100 to 200. The gain of the 2SD1289 will be in the range from 60 to 320, for the 2SD1289-P it will be in the range from 160 to 320, for the 2SD1289-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1289-Q might only be marked "D1289-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1289-Q is the 2SB966-Q.

Replacement and Equivalent for 2SD1289-Q transistor

You can replace the 2SD1289-Q with the 2SC2563, 2SC2579, 2SC2580, 2SC2581, 2SC2706, 2SC4278, 2SC4278-E, 2SC4652, 2SC4652-E, 2SD1046, 2SD1046-E, 2SD1047, 2SD1047-E, 2SD1047C, 2SD1717, 2SD1717-P, 2SD1718, 2SD1718-P, 2SD2052, 2SD2052-P, 2SD2053, 2SD2053-P, KTD1047, KTD1047-Y, KTD1047B, KTD1047B-Y, MJW3281A or MJW3281AG.
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