2SB966-P Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -120 V
• Collector-Base Voltage, max: -120 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -8 A
• Collector Dissipation: 80 W
• DC Current Gain (h_fe): 160 to 320
• Transition Frequency, min: 65 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-3P

Here is an image showing the pin diagram of this transistor.The 2SB966-P transistor can have a current gain of 160 to 320. The gain of the 2SB966 will be in the range from 60 to 320, for the 2SB966-Q it will be in the range from 100 to 200, for the 2SB966-R it will be in the range from 60 to 120.Sometimes the "2S" prefix is not marked on the package - the 2SB966-P might only be marked "B966-P".The complementary NPN transistor to the 2SB966-P is the 2SD1289-P.You can replace the 2SB966-P with the 2SA1106, 2SA1633, 2SA1633-F, 2SA1788 or 2SA1788-F.