2SB775-E Bipolar Transistor

Characteristics of 2SB775-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -85 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 18 MHz
  • Operating and Storage Junction Temperature Range: -45 to +150 °C
  • Package: TO-3P

Pinout of 2SB775-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB775-E transistor can have a current gain of 100 to 200. The gain of the 2SB775 will be in the range from 60 to 200, for the 2SB775-D it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB775-E might only be marked "B775-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SB775-E is the 2SD895-E.

SMD Version of 2SB775-E transistor

The BDP954 (SOT-223) is the SMD version of the 2SB775-E transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB775-E transistor

You can replace the 2SB775-E with the 2SA1093, 2SA1106, 2SA1146, 2SA1633, 2SA1633-E, 2SA1788, 2SA1788-E, 2SB1162, 2SB1162-P, 2SB1361, 2SB1361-P, 2SB1362, 2SB1362-P, 2SB695, 2SB816, 2SB816-E, 2SB817, 2SB817-E, 2SB817C, 2SB965, 2SB965-Q, 2SB966, 2SB966-Q, BD246C, BD250C, BDV96, KTB817, KTB817-Y, KTB817B, KTB817B-Y or TIP36CA.
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