2SB646-D Bipolar Transistor

Characteristics of 2SB646-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB646-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB646-D transistor can have a current gain of 160 to 320. The gain of the 2SB646 will be in the range from 60 to 320, for the 2SB646-B it will be in the range from 60 to 120, for the 2SB646-C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB646-D might only be marked "B646-D".

Complementary NPN transistor

The complementary NPN transistor to the 2SB646-D is the 2SD666-D.

Replacement and Equivalent for 2SB646-D transistor

You can replace the 2SB646-D with the 2SA1016, 2SA1016F, 2SA1016K, 2SA1016KF, 2SA1017, 2SA1017F, 2SA1123, 2SA1124, 2SA1207, 2SA1208, 2SA1275, 2SA1275-Y, 2SA1285, 2SA1285A, 2SA1319, 2SA1450, 2SA935, 2SA954, 2SA984K, 2SA984K-F, 2SB560, 2SB560-F, 2SB647, 2SB647D, HSB1109S, HSB1109S-D, KSA1013, KSA1013Y, KSA709C, KTA1275, KTA1275Y or NTE383.
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