KSA709C Bipolar Transistor

Characteristics of KSA709C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -0.7 A
  • Collector Dissipation: 0.8 W
  • DC Current Gain (hfe): 70 to 400
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of KSA709C

The KSA709C is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Suffix "C" means center collector in KSA709.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSA709C transistor can have a current gain of 70 to 400. The gain of the KSA709CG will be in the range from 200 to 400, for the KSA709CO it will be in the range from 70 to 140, for the KSA709CY it will be in the range from 120 to 240.

Complementary NPN transistor

The complementary NPN transistor to the KSA709C is the KSC1009C.
If you find an error please send an email to mail@el-component.com