2SA1017 Bipolar Transistor

Characteristics of 2SA1017 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 100 to 560
  • Transition Frequency, min: 110 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1017

The 2SA1017 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1017 transistor can have a current gain of 100 to 560. The gain of the 2SA1017E will be in the range from 100 to 200, for the 2SA1017F it will be in the range from 160 to 320, for the 2SA1017G it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1017 might only be marked "A1017".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1017 is the 2SC2363.
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