2SB647D Bipolar Transistor

Characteristics of 2SB647D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SB647D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB647D transistor can have a current gain of 160 to 320. The gain of the 2SB647 will be in the range from 60 to 320, for the 2SB647B it will be in the range from 60 to 120, for the 2SB647C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB647D might only be marked "B647D".

Complementary NPN transistor

The complementary NPN transistor to the 2SB647D is the 2SD667D.

Replacement and Equivalent for 2SB647D transistor

You can replace the 2SB647D with the 2SA1275, 2SA1275-Y, KSA1013, KSA1013Y, KTA1275, KTA1275Y or NTE383.
If you find an error please send an email to mail@el-component.com