HSB1109S Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -160 V
• Collector-Base Voltage, max: -160 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -0.1 A
• Collector Dissipation: 0.9 W
• DC Current Gain (h_fe): 60 to 320
• Transition Frequency, min: 140 MHz
• Operating and Storage Junction Temperature Range: -50 to +150 °C
• Package: TO-92
• Electrically Similar to the Popular 2SB1109 transistor

The HSB1109S is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.The HSB1109S transistor can have a current gain of 60 to 320. The gain of the HSB1109S-B will be in the range from 60 to 120, for the HSB1109S-C it will be in the range from 100 to 200, for the HSB1109S-D it will be in the range from 160 to 320.The complementary NPN transistor to the HSB1109S is the HSD1609S.You can replace the HSB1109S with the 2SA1275, 2SA1370, 2SA1371, 2SA1624, KSA1013, KTA1275 or KTA1279.