2SA1123 Bipolar Transistor

Characteristics of 2SA1123 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 130 to 450
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1123

The 2SA1123 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1123 transistor can have a current gain of 130 to 450. The gain of the 2SA1123-R will be in the range from 130 to 220, for the 2SA1123-S it will be in the range from 185 to 330, for the 2SA1123-T it will be in the range from 260 to 450.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1123 might only be marked "A1123".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1123 is the 2SC2631.

Replacement and Equivalent for 2SA1123 transistor

You can replace the 2SA1123 with the 2SA1124, BF421, BF423 or KTA1279.
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