2SA1016K Bipolar Transistor

Characteristics of 2SA1016K Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 160 to 960
  • Transition Frequency, min: 110 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1016K

The 2SA1016K is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1016K transistor can have a current gain of 160 to 960. The gain of the 2SA1016KF will be in the range from 160 to 320, for the 2SA1016KG it will be in the range from 280 to 560, for the 2SA1016KH it will be in the range from 480 to 960.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1016K might only be marked "A1016K".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1016K is the 2SC2326K.
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