NTE383 Bipolar Transistor
Characteristics of NTE383 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -120 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 0.9 W
- DC Current Gain (hfe): 160 to 320
- Transition Frequency, min: 140 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of NTE383
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
SMD Version of NTE383 transistor
Replacement and Equivalent for NTE383 transistor
If you find an error please send an email to mail@el-component.com