NTE383 Bipolar Transistor

Characteristics of NTE383 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of NTE383

The NTE383 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the NTE383 is the NTE382.

SMD Version of NTE383 transistor

The 2SB806 (SOT-89) and 2SD1007 (SOT-89) is the SMD version of the NTE383 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for NTE383 transistor

You can replace the NTE383 with the 2SA1275, 2SA1275-Y, KSA1013, KSA1013Y, KTA1275 or KTA1275Y.
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