2SB560 Bipolar Transistor
Characteristics of 2SB560 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.7 A
- Collector Dissipation: 0.9 W
- DC Current Gain (hfe): 60 to 560
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92MOD
Pinout of 2SB560
Classification of hFE
Marking
Complementary NPN transistor
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