2SB1143-R Bipolar Transistor

Characteristics of 2SB1143-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1143-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1143-R transistor can have a current gain of 100 to 200. The gain of the 2SB1143 will be in the range from 100 to 560, for the 2SB1143-S it will be in the range from 140 to 280, for the 2SB1143-T it will be in the range from 200 to 400, for the 2SB1143-U it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1143-R might only be marked "B1143-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1143-R is the 2SD1683-R.

SMD Version of 2SB1143-R transistor

The 2SB1123 (SOT-89), 2SB1123-R (SOT-89), 2SB1124 (SOT-89), 2SB1124-R (SOT-89) and BDP950 (SOT-223) is the SMD version of the 2SB1143-R transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1143-R transistor

You can replace the 2SB1143-R with the 2SB1165, 2SB1165-R, 2SB1166, 2SB1166-R, 2SB1168, 2SB1168-R, 2SB986, 2SB986-R, BD190, BD788, BD788G, BD790, BD792, MJE233, MJE235, MJE250, MJE252 or MJE254.
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