2SB1166-R Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -50 V
• Collector-Base Voltage, max: -60 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -8 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 100 to 200
• Transition Frequency, min: 130 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126

Here is an image showing the pin diagram of this transistor.The 2SB1166-R transistor can have a current gain of 100 to 200. The gain of the 2SB1166 will be in the range from 70 to 400, for the 2SB1166-Q it will be in the range from 70 to 140, for the 2SB1166-S it will be in the range from 140 to 280, for the 2SB1166-T it will be in the range from 200 to 400.Sometimes the "2S" prefix is not marked on the package - the 2SB1166-R might only be marked "B1166-R".The complementary NPN transistor to the 2SB1166-R is the 2SD1723-R.