2SB1166-R Bipolar Transistor

Characteristics of 2SB1166-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1166-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1166-R transistor can have a current gain of 100 to 200. The gain of the 2SB1166 will be in the range from 70 to 400, for the 2SB1166-Q it will be in the range from 70 to 140, for the 2SB1166-S it will be in the range from 140 to 280, for the 2SB1166-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1166-R might only be marked "B1166-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1166-R is the 2SD1723-R.
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